Method For Producing Silicon Single Crystal Ingot
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United States of America Patent
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Issued Date -
Jun 28, 2012
app pub date -
Dec 19, 2011
filing date -
Dec 28, 2010
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Abstract
An ingot production method which makes it possible to greatly restrict formation of pinholes or substantially prevent them avoids the use of substantial amounts of small-sized polycrystalline silicon chunks of polycrystalline silicon chunks, only middle-sized polycrystalline silicon chunks and large-sized polycrystalline silicon chunks. In the step of filling polycrystalline silicon, the polycrystalline silicon chunks are randomly supplied into the crucible.
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