METHOD FOR CRYSTALLIZING A LAYER

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United States of America Patent

APP PUB NO 20120160152A1
SERIAL NO

13394274

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Abstract

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The transfer of the structure of a crystal (3) having an amorphous or crystal structure to a thin layer (1) with a different structure can be achieved by the combination of a pressing (6) and a heating (7) to apply the layer onto the crystal and anneal it to crystallize it. Characteristically, wedges (5) are placed at the edges to flex the layer and give rise to cracking of the assembly and releasing the layer when the pressure ceases, which eliminates the complicated methods for withdrawing the crystal (3) or even destroying it, enables the use of the crystal (3) in several layers to be crystallized, allows a good manufacturing rate and reduces costs.

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COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESPARIS FRANCE PARIS PARIS

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