METHOD AND APPARATUS FOR CORRECTING ERRORS ON A WAFER PROCESSED BY A PHOTOLITHOGRAPHIC MASK
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United States of America Patent
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app pub date -
Dec 2, 2011
filing date -
Dec 17, 2010
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Abandoned
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Abstract
A method for correcting errors on a wafer processed by a photolithographic mask at a wafer processing site is provided. The method comprises measuring errors on the wafer, and modifying a pattern placement on the photolithographic mask by locally applying femtosecond light pulses of a laser system to the photolithographic mask at the wafer processing site.
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