HIGH ELECTRON MOBILITY TRANSISTOR WITH INDIUM GALLIUM NITRIDE LAYER
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United States of America Patent
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Issued Date -
Jun 21, 2012
app pub date -
Dec 20, 2010
filing date -
Dec 20, 2010
priority date (Note) -
Abandoned
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Abstract
Disclosed embodiments include a high electron mobility transistor (HEMT) with an indium gallium nitride layer set as one of a plurality of barrier sublayers and methods for forming such a HEMT. Other embodiments are also be described and claimed.
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