METHOD OF PRODUCING EPITAXIAL SILICON WAFER
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United States of America Patent
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Issued Date -
Jun 14, 2012
app pub date -
Aug 6, 2010
filing date -
Aug 19, 2009
priority date (Note) -
Abandoned
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Abstract
An object of the invention is to provide an epitaxial silicon wafer in higher quality with good flatness and thickness uniformity. The object is achieved by a method characterized in that after an epitaxial film 20 is formed on a surface of a mirror polished silicon wafer 10, a grinding process, a polishing process, or a chemical etching process is performed only on the rear surface of the silicon wafer 10, and silicon precipitate 21 that adheres to an end portion of the rear surface of the silicon wafer 10 in the formation of the epitaxial film 20 is removed.
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