Method of forming resistance variable memory device
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United States of America Patent
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Nov 12, 2013
Grant Date -
Jun 7, 2012
app pub date -
Sep 23, 2011
filing date -
Dec 3, 2010
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Abstract
A method of forming a resistance variable memory device, the method including forming a diode on a semiconductor substrate; forming a lower electrode on the diode; forming a first insulating film on the lower electrode, the first insulating film having an opening; forming a resistance variable film filling the opening such that the resistance variable film includes an amorphous region adjacent to a sidewall of the opening and a crystalline region adjacent to the lower electrode; and forming an upper electrode on the resistance variable film.
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