DRY ETCHING METHOD OF SURFACE TEXTURE FORMATION ON SILICON WAFER
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United States of America Patent
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Issued Date -
Jun 7, 2012
app pub date -
Nov 1, 2011
filing date -
Nov 1, 2010
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Abandoned
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Abstract
Systems and methods for improving surface reflectance of silicon wafers are disclosed. The systems and methods improve surface reflectance by forming a textured surface on the silicon wafer by performing surface oxidation and dry etching processes. The surface oxidation maybe performed using a dry oxygen plasma process. A dry etch process is performed to remove the oxide layer formed by the surface oxidation step and etch the Silicon layer with oxide masking. Dry etching enables black silicon formation, which minimizes or eliminates light reflection or scattering, eventually leading to higher energy conversion efficiency.
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