SILICON REMOVAL FROM SURFACES AND METHOD OF FORMING HIGH K METAL GATE STRUCTURES USING SAME
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United States of America Patent
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Issued Date -
May 31, 2012
app pub date -
Nov 29, 2011
filing date -
Nov 30, 2010
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Abandoned
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Abstract
A method of fabricating a semiconductor device, comprising carrying out a gate last process including forming a dummy gate of polysilicon, and thereafter removing the dummy gate for replacement by a metal gate, wherein the dummy gate is removed by XeF2 etch removal.
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