LAYER STRUCTURES FOR CONTROLLING STRESS OF HETEROEPITAXIALLY GROWN III-NITRIDE LAYERS
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United States of America Patent
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Issued Date -
May 24, 2012
app pub date -
Nov 24, 2010
filing date -
Nov 24, 2010
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Abandoned
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Abstract
A III-N layer structure is described that includes a III-N buffer layer on a foreign substrate, an additional III-N layer, a first III-N structure, and a second III-N layer structure. The first III-N structure atop the III-N buffer layer includes at least two III-N layers, each having an aluminum composition, and the III-N layer of the two III-N layers that is closer to the III-N buffer layer having the larger aluminum composition. The second III-N structure includes a III-N superlattice, the III-N superlattice including at least two III-N well layers interleaved with at least two III-N barrier layer. The first III-N structure and the second III-N structure are between the additional III-N layer and the foreign substrate.
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