IR PHOTODETECTORS WITH HIGH DETECTIVITY AT LOW DRIVE VOLTAGE
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United States of America Patent
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Issued Date -
May 24, 2012
app pub date -
Oct 13, 2011
filing date -
Nov 23, 2010
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Abstract
An IR photodetector with high detectivity comprises an IR sensitizing layer situated between an electron blocking layer (EBL) and a hole blocking layer (HBL). The EBL and HBL significantly reduce the dark current, resulting in a high detectivity while allowing use of a low applied voltage to the IR photodetector.
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