FLASH MEMORY APPARATUS

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United States of America Patent

APP PUB NO 20120124272A1
SERIAL NO

12944737

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Abstract

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A flash memory apparatus including a command analysis unit, a first flash memory and a second flash memory is provided. The command analysis unit with a plurality of command buffers receives a plurality of command elements and queues the command elements in the command buffers in sequence. The command analysis unit transmits the command elements simultaneously to the first flash memory and the second flash memory through a command bus, and the flash memory device writes/reads the first flash memory and the second flash memory simultaneously through a first data bus and a second data bus different from the first data bus respectively to execute an operation. The flash memory device queues the command elements so as to enhance the command throughput, and the flash memories share the same command bus for dual channel operation.

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Patent Owner(s)

Patent OwnerAddress
EMEMORY TECHNOLOGY INCROOM 305 NO 47 PARK AVENUE II RD HSINCHU SCIENCE PARK HSIN-CHU 300091

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsiao, Ching-Hua Hsinchu City, TW 3 6
Lee, Jean-Yi Taoyuan County, TW 1 1
Lee, Tsung-Hsien Hsinchu County, TW 27 71
Yang, Sheng-An Kaohsiung County, TW 9 66

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