DIRECT CURRENT ION IMPLANTATION FOR SOLID PHASE EPITAXIAL REGROWTH IN SOLAR CELL FABRICATION
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United States of America Patent
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Issued Date -
May 17, 2012
app pub date -
Nov 17, 2011
filing date -
Nov 17, 2010
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Abandoned
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Abstract
An apparatus and methods for ion implantation of solar cells. The disclosure provide enhanced throughput and recued or elimination of defects after SPER anneal step. The substrate is continually implanted using continuous high dose-rate implantation, leading to efficient defect accumulation, i.e., amorphization, while suppressing dynamic self-annealing.
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