ELECTRO-OPTICAL DEVICES BASED ON THE VARIATION IN THE INDEX OR ABSORPTION IN THE ISB TRANSITIONS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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N/A
Issued Date -
May 17, 2012
app pub date -
Jul 30, 2010
filing date -
Jul 30, 2009
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Electro-optical components are disclosed having intersubband transitions by quantum confinement between two Group III nitride elements, typically by means of GaN/AlN. Related devices or systems are also disclosed including such components, as well as to a method for manufacturing such a component. Such a component includes at least one active area that includes at least two so-called outer barrier layers surrounding one or more N-doped quantum well structures, and said quantum well structure(s) are each surrounded by two barrier areas that are unintentionally doped at a thickness of at least five monoatomic layers.
First Claim
Other Claims data not available