PROCESS FOR PRODUCING A SEMICONDUCTOR-ON-SAPPHIRE ARTICLE
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United States of America Patent
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Issued Date -
May 17, 2012
app pub date -
Jun 11, 2010
filing date -
Jun 12, 2009
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Abandoned
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Abstract
A process for producing a semiconductor-on-sapphire article, including: forming a barrier layer and a semiconductor layer on a sapphire substrate, the barrier layer being disposed between the sapphire substrate and the semiconductor layer to inhibit at least one of aluminium from the sapphire and extended defects arising from the sapphire-semiconductor interface from entering the semiconductor layer; wherein the semiconductor is at least one of silicon and a silicon-germanium alloy.
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