Vertical Light Emitting Diode (VLED) Die Having N-Type Confinement Structure With Etch Stop Layer And Method Of Fabrication
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United States of America Patent
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Issued Date -
May 17, 2012
app pub date -
Nov 12, 2010
filing date -
Nov 12, 2010
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Abandoned
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Abstract
A vertical light emitting diode (VLED) die includes a p-type confinement layer, an active layer on the p-type confinement layer configured to emit light, and an n-type confinement structure having at least one etch stop layer configured to protect the active layer. A method for fabricating a vertical light emitting diode (VLED) die includes the steps of: providing a carrier substrate; forming an n-type confinement structure on the carrier substrate having at least one etch stop layer; forming an active layer on the n-type confinement structure; forming a p-type confinement layer on the active layer; and removing the carrier substrate.
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