FABRICATION OF AN INTEGRATED TERAHERTZ SOURCE USING FIELD EMITTER ARRAY WITH GRATING STRUCTURE
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United States of America Patent
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Issued Date -
May 17, 2012
app pub date -
Aug 1, 2007
filing date -
Aug 1, 2006
priority date (Note) -
Abandoned
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Abstract
The present invention provides for a fabrication of an integrated THz source. The fabrication includes integrating a field emitter array (FEA) with a grating by utilizing micro-electromechanical system (MEMS) and grating fabrication methods to build the FEA device upon a moveable surface that can be rotated perpendicular to the other, and locked into alignment or alternately finely adjusted.
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