FABRICATION METHOD FOR DICING OF SEMICONDUCTOR WAFERS USING LASER CUTTING TECHNIQUES

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United States of America Patent

APP PUB NO 20120115308A1
SERIAL NO

13079306

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Abstract

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A fabrication method for dicing semiconductor wafers using laser cutting techniques, which can effectively prevent the devices on semiconductor die units from the phenomenon of etching undercut caused by the sequential steps after laser cutting, comprises following steps: covering the wafer surface with a protection layer; dicing the wafer by laser and separating the die units from each other; removing the laser cutting residues on the devices on the die units by wet etching; removing the protection layer and cleaning the devices on the die units. The selection of materials for the protection layer must consider the following factors: where (1) the materials for the protection layer must have relatively good properties for adhering and covering on the wafer; (2) and the materials for the protection layer must be corrosion-resistant to the acidic or basic solution for etching residues.

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Patent Owner(s)

Patent OwnerAddress
WIN SEMICONDUCTORS CORPNO 69 KEJI 7TH RD GUISHAN DIST TAOYUAN CITY 33383

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
CHEN, Ping Wei Tao Yuan Shien, TW 2 37
CHIN, Chen-Che Tao Yuan Shien, TW 2 37
HO, Benny Tao Yuan Shien, TW 2 37
HUA, Chang-Huang Tao Yuan Shien, TW 2 37
HUANG, Kevin Tao Yuan Shien, TW 89 1229

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