RAM MEMORY ELEMENT WITH ONE TRANSISTOR

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United States of America Patent

APP PUB NO 20120113730A1
SERIAL NO

13264203

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A memory element includes a MOS transistor having a drain, a source and a body region covered by an insulated gate, wherein the thickness of the body region is divided into two distinct regions separated by a portion of an insulating layer extending parallel to the plane of the gate.

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Patent Owner(s)

Patent OwnerAddress
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE3 RUE MICHEL ANGE PARIS 75016
UNIVERSIDAD DE GRANADAAVDA DEL HOSPICIO S/N 18071 GRANADA (GRANADA) 18071

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cristoloveanu, Sorin Ioan Seyssinet, FR 4 18
Gamiz, Francisco Armilla(Granada), ES 3 9
Rodriguez, Noel Armilla(Granada), ES 3 9

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