OPTOELECTRONIC DEVICES INCLUDING HETEROJUNCTION

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United States of America Patent

APP PUB NO 20120104460A1
SERIAL NO

12939077

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Abstract

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Embodiments of the invention generally relate to optoelectronic semiconductor devices such as photovoltaic devices including solar cells. In one aspect, an optoelectronic semiconductor device includes an absorber layer made of gallium arsenide (GaAs) and having only one type of doping. An emitter layer is located closer than the absorber layer to a back side of the device, the emitter layer made of a different material than the absorber layer and having a higher bandgap than the absorber layer. A heterojunction formed between the emitter layer and the absorber layer, and a p-n junction is formed between the emitter layer and the absorber layer and at least partially within the different material at a location offset from the heterojunction. The p-n junction causes a voltage to be generated in the device in response to the device being exposed to light at a front side of the device.

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Patent Owner(s)

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ALTA DEVICES INC3260 SCOTT BLVD SANTA CLARA CA 95054

International Classification(s)

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  • 2010 Application Filing Year
  • H01L Class
  • 16510 Applications Filed
  • 13147 Patents Issued To-Date
  • 79.64 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20102011201220132014201520162017201820192020202120220255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KAYES, Brendan M San Francisco, US 39 297
KIZILYALLI, Isik C San Francisco, US 145 1919
NIE, Hui Santa Clara, US 97 729

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Patent Citation Ranking

  • 13 Citation Count
  • H01L Class
  • 50.29 % this patent is cited more than
  • 13 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges234326114937383772491639770504017801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +020040060080010001200140016001800200022002400260028003000320034003600

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