METALLIC CONTACTS FOR PHOTOVOLTAIC DEVICES AND LOW TEMPERATURE FABRICATION PROCESSES THEREOF
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United States of America Patent
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Issued Date -
May 3, 2012
app pub date -
Nov 3, 2010
filing date -
Nov 3, 2010
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Abandoned
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Abstract
Embodiments of the invention generally relate to photovoltaic devices and more specifically, to the metallic contacts disposed on photovoltaic devices, such as photovoltaic cells, and to the fabrication processes for forming such metallic contacts. The metallic contacts contain a palladium germanium alloy formed at low temperatures during an anneal process. In some embodiments, the photovoltaic cell may be heated to a temperature within a range from about 20° C. to about 275° C. during the anneal process, for example, at about 150° C. for about 30 minutes. In other embodiments, the photovoltaic cell may be heated to a temperature within a range from about 150° C. to about 275° C. for a time period of at least about 0.5 minutes during the anneal process.
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