METHOD AND APPARATUS FOR DRYING A SEMICONDUCTOR WAFER
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United States of America Patent
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Issued Date -
May 3, 2012
app pub date -
Oct 28, 2010
filing date -
Oct 28, 2010
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Abandoned
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Abstract
A method and apparatus for drying semiconductor wafers uses hot isopropyl alcohol in liquid form at temperatures above 60° C. and below 82° C. The use of hot IPA better avoids pattern collapse and permits reduced consumption of IPA. The wafer temperature can be maintained by applying hot deionized water to the opposite wafer side and by evaporating the hot IPA from the wafer surface using heated nitrogen gas.
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