Production of Polycrystalline Silicon By The Thermal Decomposition of Trichlorosilane In A Fluidized Bed Reactor

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United States of America Patent

APP PUB NO 20120100059A1
SERIAL NO

12910465

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Abstract

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Processes for producing polycrystalline silicon by thermal decomposition of trichlorosilane are disclosed. The processes generally involve thermal decomposition of trichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.

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Patent OwnerAddress
MEMC ELECTRONIC MATERIALS INC501 PEARL DRIVE ST PETERS MO 63376

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bhusarapu, Satish Houston, US 27 64
Gupta, Puneet Houston, US 211 3406
Huang, Yue Midlothian, US 82 604
Kulkarni, Milind S St. Louis, US 10 104

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