METHOD AND APPARATUS TO CONTROL IONIC DEPOSITION

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United States of America Patent

APP PUB NO 20120097525A1
SERIAL NO

13093775

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Abstract

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A sputtering source having a bias field generated between the substrate and the sputtering source. A conductive louver or grid arrangement is positioned in front of the substrate, and is biased by an RF or DC source. The substrate itself may or may not be biased, as needed. The conductive louvers are rotatable to also function as shutters or collimator to control the flux of the deposited species. The shutter arrangement is mounted onto the sputtering opening of a facing target source (FTS). The shutter is biased by an RF or DC source and the applied power and rotation position of each slat in the shutter are controlled to achieve the desired flux and collimation.

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Patent Owner(s)

Patent OwnerAddress
INTEVAC INC3560 BASSETT STREET SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
HARKNESS,, IV Samuel D Berkeley, US 29 61
Tran, Quang N San Jose, US 10 32

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