Method for Fabricating a Vertical Light-Emitting Diode with High Brightness
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United States of America Patent
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Issued Date -
Apr 12, 2012
app pub date -
Oct 10, 2011
filing date -
Oct 12, 2010
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Abandoned
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Abstract
A method for fabricating a vertical light-emitting diode comprises forming a stack including a plurality of epitaxial layers on a patterned first substrate, placing a second substrate on the stack, removing the first substrate to expose the first surface, planarizing a first surface of the stack that was in contact with the patterned first substrate and has a pattern corresponding to a pattern provided on the first substrate to form a planarized second surface, and forming a first electrode in contact with a side of the second substrate that is opposite to the stack, and a second electrode in contact with the second surface of the stack. A roughening step can be performed to form uneven surface portions on a region of the second surface for improving light emission through the second surface of the stack.
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