LIGHT-EMITTING DIODE HAVING A WAVELENGTH CONVERSION MATERIAL LAYER, AND METHOD FOR FABRICATING SAME

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United States of America Patent

APP PUB NO 20120086040A1
SERIAL NO

13376714

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Provided is a light-emitting diode having a wavelength conversion material and a method for fabricating the same. The light-emitting diode comprises: a base structure; a light-emitting diode chip arranged on the base structure; and a wavelength conversion material layer arranged on the light-emitting diode chip, such that the area adjacent the upper surface of the light-emitting diode chip is thicker than the area adjacent to the side surface of the light-emitting diode chip. In addition, the method for fabricating a light-emitting diode comprises: a step of arranging the light-emitting diode chip on the base structure; and a step of arranging a wavelength conversion material layer containing a light-transmitting photocurable material on the light-emitting diode chip, such that the area thereof adjacent to the upper surface of the light-emitting diode chip is thicker than the area thereof adjacent to the side surface of the light-emitting diode chip.

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Patent Owner(s)

Patent OwnerAddress
KOREA PHOTONICS TECHNOLOGY INSTITUTE971-35 WOLCHUL-DONG BUK-GU GWANGJU 500-779

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Jae-Pil Gwangju, KR 11 120
Kim, Sang-Mook Gwangju, KR 13 67
Lee, Kwang-Cheol Gwangju, KR 8 25
Song, Sang-Bin Gwangju, KR 3 25

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