Methods of forming memory cells
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United States of America Patent
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Apr 2, 2013
Grant Date -
Mar 22, 2012
app pub date -
Sep 20, 2010
filing date -
Sep 20, 2010
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Abstract
Some embodiments include methods of forming memory cells utilizing various arrangements of conductive lines, electrodes and programmable material; with the programmable material containing high k dielectric material directly against multivalent metal oxide. Some embodiments include arrays of memory cells, with the memory cells including programmable material containing high k dielectric material directly against multivalent metal oxide.
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