Charged-Particle Beam Lithographic Apparatus and Lithographic Method Therefor
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United States of America Patent
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Issued Date -
Mar 15, 2012
app pub date -
Sep 12, 2011
filing date -
Sep 13, 2010
priority date (Note) -
Abandoned
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Abstract
A charged-particle beam lithographic method is implemented by irradiating resist applied on a material surface with successive shots of a variably shaped charged-particle beam. A table is drawn up which indicates the relations of the distances of each shot of interest to adjacent shots to corresponding amounts of correction applied to sides of the shot of interest taking account of the influence of forward scattering. Corrective shot data is found from the table by translating the sides of the shot of interest located opposite to the adjacent shots. Corrective values for a proximity effect produced under the influence of backward scattering are calculated based on the corrective shot data. The shots of the beam are carried out based on the corrective shot data and on the corrective values.
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