Method of manufacturing magnetoresistive element

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United States of America Patent

PATENT NO 8685491
SERIAL NO

13186389

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Abstract

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According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO

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Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2011201220132014201520162017201820192020202120220255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fuji, Yoshihiko Kawasaki, JP 141 1569
Fukuzawa, Hideaki Kawasaki, JP 225 3236
Hara, Michiko Yokohama, JP 100 1143
Murakami, Shuichi Tokyo, JP 160 2372
Takeo, Akihiko Kunitachi, JP 90 1154
Yuasa, Hiromi Kawasaki, JP 136 2704

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  • 3 Citation Count
  • G11B Class
  • 8.79 % this patent is cited more than
  • 11 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges24917325181886936129555401 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +01002003004005006007008009001000110012001300140015001600170018001900

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