CU-GA ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Feb 23, 2012
app pub date -
Apr 14, 2010
filing date -
Apr 14, 2009
priority date (Note) -
Abandoned
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Abstract
Disclosed is a Cu—Ga alloy sputtering target which enables the formation of a Cu—Ga sputtering film having excellent uniformity in film component composition (film uniformity), enables the reduction of occurrence of arcing during sputtering, has high strength, and rarely undergoes cracking during sputtering. Specifically disclosed is a Cu—Ga alloy sputtering target which comprises a Cu-based alloy containing Ga, has an average crystal particle diameter of 10 μm or less, and has a porosity of 0.1% or less.
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