ULTRA-FINE-GRAINED POLYSILICON THIN FILM VAPOUR-DEPOSITION METHOD
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United States of America Patent
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Issued Date -
Feb 16, 2012
app pub date -
Apr 12, 2010
filing date -
Apr 28, 2009
priority date (Note) -
Abandoned
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Abstract
Provided is a method of depositing an ultra-fine grain polysilicon thin film. The method includes forming a nitrogen atmosphere in a chamber loaded with a substrate, and supplying a source gas into the chamber to deposit a polysilicon thin film on the substrate, in which the source gas includes a silicon-based gas, a nitrogen-based gas, and a phosphorous-based gas. The forming of the nitrogen atmosphere may include supplying a nitrogen-based gas into the chamber.
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