METHOD FOR FORMING SILICON FILM HAVING MICROCRYSTAL STRUCTURE
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United States of America Patent
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Issued Date -
Feb 16, 2012
app pub date -
May 27, 2011
filing date -
Aug 13, 2010
priority date (Note) -
Abandoned
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Abstract
A method for forming a silicon film having a microcrystal structure is provided. The method includes following steps. A plasma-enhanced chemical vapor deposition system having a reaction chamber, a top electrode and a bottom electrode is provided. The top electrode and the bottom electrode are opposite and disposed in the reaction chamber. A substrate is disposed on the bottom electrode. A silane gas is applied into the reaction chamber. A silicon film having a microcrystal structure is formed by simultaneously irradiating the silane gas in the reaction chamber by a carbon dioxide laser and performing a plasma-enhanced chemical vapor deposition step.
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