METHOD AND APPARATUS FOR IRRADIATING A SEMICONDUCTOR MATERIAL SURFACE BY LASER ENERGY
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United States of America Patent
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app pub date -
Dec 21, 2009
filing date -
Jan 26, 2009
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method for irradiating semiconductor material including irradiating a region of a semiconductor material layer surface with a first laser having laser irradiation parameters to melt at least a part of the region and controlling the irradiation process by adapting the irradiation parameters by determining the depth of the melted region part. An apparatus for irradiating semiconductor material is disclosed which has a first laser for irradiating a region of a semiconductor layer surface to melt at least a part of the region. The laser having laser irradiation parameters and a controller for controlling the irradiation process by adapting the laser irradiation parameters by determining the depth of the melted region part.
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- 3 Citation Count
- B23K Class
- 6.96 % this patent is cited more than
- 13 Age