METHOD FOR CLEANING SILICON SLUDGE

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United States of America Patent

APP PUB NO 20120034147A1
SERIAL NO

13264232

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Abstract

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After removing organic matters and forming a silicon oxide film by ozone-oxidizing a silicon powder in silicon sludge, the ozone is removed and the resulting sludge is dispersed into hydrochloric acid for dissolving metal impurities thereinto. Then, the supernatant liquid of the hydrochloric acid is removed, and the silicon oxide film is dissolved with hydrofluoric acid after being rinsed with ultrapure water, so that the metal impurities in the surface layer of the silicon powder are removed.

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Patent Owner(s)

Patent OwnerAddress
SUMCO CORPORATION2-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-8634

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Okita, Kenji Tokyo, JP 18 263

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