Silicon Wafer And Production Method Thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Feb 9, 2012
app pub date -
Jul 27, 2011
filing date -
Aug 9, 2010
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A silicon wafer contains: a silicon substrate; a first epitaxial layer on the silicon wafer, wherein the absolute value of the difference between donor and acceptor concentrations is .gtoreq.1.times.10.sup.18 atoms/cm.sup.3; a second epitaxial layer above the first epitaxial layer, whose conductivity type is the same as the first epitaxial layer, wherein the absolute value of the difference between donor and acceptor concentrations is .ltoreq.5.times.10.sup.17 atoms/cm.sup.3; wherein, by doping a lattice constant adjusting material into the first epitaxial layer, the variation amount ((a.sub.1-a.sub.Si)/a.sub.Si) of the lattice constant of the first epitaxial layer (a.sub.1) relative to the lattice constant of the silicon single crystal (a.sub.Si) as well as the variation amount ((a.sub.2-a.sub.Si)/a.sub.Si) of the lattice constant of the second epitaxial layer (a.sub.2) relative to the lattice constant of the silicon single crystal (a.sub.Si) are controlled to less than the critical lattice mismatch.
First Claim
Other Claims data not available