Thin films and methods of making them using cyclohexasilane

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United States of America Patent

APP PUB NO 20120024223A1
SERIAL NO

13135033

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Abstract

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Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

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Patent Owner(s)

Patent OwnerAddress
MATHESON TRI-GAS INCBASKING RIDGE NJ 07920

International Classification(s)

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  • 2011 Application Filing Year
  • C30B Class
  • 359 Applications Filed
  • 298 Patents Issued To-Date
  • 83.01 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2011201220132014201520162017201820192020202120220255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Brabant, Paul David East Greenbush, US 2 390
Francis, Terry Arthur Schenectady, US 2 390
Hasaka, Satoshi Tokyo, JP 8 429
Torres,, JR Robert Parker, US 24 568

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  • 378 Citation Count
  • C30B Class
  • 98.83 % this patent is cited more than
  • 13 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1916037169225112301 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0102030405060708090100110120130140150160170

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