CONDUCTIVE STRUCTURE FOR A SEMICONDUCTOR INTEGRATED CIRCUIT
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United States of America Patent
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N/A
Issued Date -
N/A
app pub date -
Sep 29, 2011
filing date -
Sep 13, 2007
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A conductive structure for a semiconductor integrated circuit is provided. The semiconductor integrated circuit has a substrate, a plurality of pads and a passivation layer. The pads are disposed on the substrate. The passivation layer extends over and covers a part of the substrate and a part of around each of the pads to define a plurality of openings, in which the conductive structure electrically connects to a corresponding pad of the pads through a corresponding opening of the openings. The conductive structure includes a buffering layer, an under bump metallurgy (UBM) layer and a bump. The buffering layer is formed on the passivation layer without fully blocking the corresponding opening. The UBM layer is substantially formed in the corresponding opening and electrically connects to the corresponding pad. Additionally, the UBM layer, formed under the bump, continuously extends over and covers a peripheral portion of the buffering layer.
First Claim
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