LIGHT PIPE FABRICATION WITH IMPROVED SENSITIVITY
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United States of America Patent
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Issued Date -
Jan 26, 2012
app pub date -
Jul 20, 2010
filing date -
Jul 20, 2010
priority date (Note) -
Abandoned
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Abstract
In accordance with at least some embodiments of the present disclosure, a process for fabricating a light pipe (LP) is described. The process may be configured to etch a first portion of a LP funnel in a dielectric layer of a semiconductor structure using a web etching process, wherein the dielectric layer is above a photodiode region. The process may also be configured to etch a second portion of the LP funnel in the dielectric layer subsequent to the etching of the first portion of the LP funnel, wherein the second portion of the LP funnel is etched below the first portion of the LP funnel using a dry etching process.
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