MOS DEVICE FOR ELIMINATING FLOATING BODY EFFECTS AND SELF-HEATING EFFECTS
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United States of America Patent
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Issued Date -
Jan 26, 2012
app pub date -
Sep 8, 2010
filing date -
Jun 25, 2010
priority date (Note) -
Abandoned
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Abstract
A MOS device having low floating charge and low self-heating effects are disclosed. The device includes a connective layer coupling the active gate channel to the Si substrate. The connective layer provides electrical and thermal passages during device operation, which could eliminate floating effects and self-heating effects. An example of a MOS device having a SiGe connector between a Si active channel and a Si substrate is disclosed in detail and a manufacturing process is provided.
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