PLASMA DOPING APPARATUS AND PLASMA DOPING METHOD
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United States of America Patent
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Issued Date -
Jan 19, 2012
app pub date -
Jul 15, 2011
filing date -
Jul 16, 2010
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Abstract
A plasma doping apparatus for adding an impurity to a semiconductor substrate includes a chamber, a gas supply unit configured for supplying gas to the chamber, and a plasma source by which to cause the chamber to generate plasma of the supplied gas. The mixed gas containing material gas containing an impurity element to be added to the semiconductor substrate, hydrogen gas, and diluent gas for diluting the material gas is supplied to the chamber.
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