Memristive negative differential resistance device
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United States of America Patent
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Sep 25, 2012
Grant Date -
Jan 19, 2012
app pub date -
Jul 16, 2010
filing date -
Jul 16, 2010
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Abstract
A memristive Negative Differential Resistance (NDR) device includes a first electrode adjacent to a memristive matrix, the memristive matrix including an intrinsic semiconducting region and a highly doped secondary region, a Metal-Insulator-Transition (MIT) material in series with the memristive matrix, and a second electrode adjacent to the MIT material.
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