NONVOLATILE FLASH MEMORY STRUCTURES INCLUDING FULLERENE MOLECULES AND METHODS FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Jan 19, 2012
app pub date -
Jul 21, 2011
filing date -
Mar 27, 2009
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Abandoned
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Abstract
provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application. Embodiments also contemplate engineered fullerene molecules incorporated within the context of at least one of a tunneling dielectric and a floating gate within a nonvolatile flash memory structure.
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