DYNAMIC RANDOM ACCESS MEMORY HAVING JUNCTION FIELD EFFECT TRANSISTOR CELL ACCESS DEVICE
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United States of America Patent
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Issued Date -
Jan 12, 2012
app pub date -
Sep 15, 2011
filing date -
Sep 2, 2007
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Abandoned
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Abstract
A method of fabricating a dynamic random access memory (DRAM) can include depositing a semiconductor electrode layer in contact with a surface of a semiconductor substrate; patterning the electrode layer to form a plurality of access junction field effect transistor (JFET) gate electrodes and a plurality of sense amplifier bipolar junction transistor (BJT) electrodes; and forming a charge storage structure coupled to a source of each access JFET.
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