ONE TIME PROGRAMMABLE MEMORY AND THE MANUFACTURING METHOD AND OPERATION METHOD THEREOF
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United States of America Patent
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Issued Date -
Jan 12, 2012
app pub date -
Nov 1, 2010
filing date -
Jul 6, 2010
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Abandoned
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Abstract
A one time programmable memory having a memory cell formed on a substrate is provided. The memory cell has a transistor and an anti-fuse structure. The anti-fuse structure is consisted of a doping region, and a dielectric layer and a conductive layer is formed in the top edge corner region of an isolation structure. The upper surface of the isolation structure is lower than the surface of the substrate so as to expose the top edge corner region. The conductive layer is formed on the isolation structure and covers the top edge corner region. The dielectric layer is formed on the top edge corner region and between the doping region and the conductive layer. The memory cell stores the digital data depending on whether the dielectric layer breaks down or not.
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