Intrinsic Programming Current Control for a RRAM
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United States of America Patent
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Issued Date -
Jan 12, 2012
app pub date -
Jul 12, 2010
filing date -
Jul 12, 2010
priority date (Note) -
Abandoned
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Abstract
A resistive switching device. The device includes a substrate and a first dielectric material overlying a surface region of the substrate. The device includes a first electrode overlying the first dielectric material and an optional buffer layer overlying the first electrode. The device includes a second electrode structure. The second electrode includes at least a silver material. In a specific embodiment, a switching material overlies the optional buffer layer and disposed between the first electrode and the second electrode. The switching material comprises an amorphous silicon material in a specific embodiment. The amorphous silicon material is characterized by a plurality of defect sites and a defect density. The defect density is configured to intrinsically control programming current for the device.
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