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Abstract

The invention relates to a device for depositing at least one, in particular crystalline, layer on at least one substrate (5), having a susceptor (2) for accommodating the at least one substrate (5), the susceptor forming the floor of a process chamber (1), having a cover plate (3) which forms the ceiling of the process chamber (1), and having a gas inlet element (4) for introducing process gases, which decompose into the layer-forming components in the process chamber as the result of heat input, and a carrier gas, wherein below the susceptor (2) a multiplicity of heating zones (H.sub.1-H.sub.8) are situated next to one another, by means of which in particular different heat outputs (Q.sub.1, Q.sub.2) are introduced into the susceptor (2) in order to heat the susceptor surface facing the process chamber (1) and the gas located inside the process chamber (1), a heat dissipation element (8) which is thermally coupled to the cover plate (3) being provided above the cover plate (3) in order to dissipate the heat transported from the susceptor (2) to the cover plate (3). To increase the crystal quality and the efficiency of the deposition process, it is proposed that the heat-conveying coupling between the cover plate (3) and the heat dissipation element (8) is different at different locations, heat-conveying coupling zones (Z.sub.1-Z.sub.8) having high heat-conveying capability corresponding in location to heating zones (H.sub.1-H.sub.8) of high heat output (Q.sub.1, Q.sub.2).

First Claim