CHEMICAL VAPOR DEPOSITION REACTOR WITH ISOLATED SEQUENTIAL PROCESSING ZONES
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United States of America Patent
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Issued Date -
Dec 22, 2011
app pub date -
Aug 30, 2011
filing date -
May 30, 2008
priority date (Note) -
Abandoned
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Abstract
A chemical vapor deposition reactor and system has a housing, a substrate transport apparatus and a plurality of fixed processing zones. The processing zones include one or more chemical vapor deposition zones, each having an independent reactant gas supply. Each chemical vapor deposition zone may have a respective showerhead. The substrate transport apparatus moves the substrate along a path from the entrance of the housing to the exit of the housing, passing sequentially through each of the processing zones. A respective isolation zone between neighboring processing zones functions to prevent mixing of gases between the processing zones. The isolation zone has a gas dual flow path directing gas flows in opposing directions. The isolation zone may include a gas inflow isolator coupled via a gas dual flow path to respective exhaust ports of respective process zones. The isolation zone may include a respective isolation curtain having a split gas flow.
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