SiC Crystals Having Spatially Uniform Doping Impurities
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United States of America Patent
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Issued Date -
Dec 15, 2011
app pub date -
Aug 25, 2011
filing date -
Apr 19, 2005
priority date (Note) -
Abandoned
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Abstract
A sublimation-grown silicon carbide (SiC) single crystal boule includes a deep level dopant introduced into the SiC single crystal boule during sublimation-growth thereof such that in a continuous section of the boule that is not less than 50% of a continuous length of said boule, the deep level dopant concentration at the boule center varies by not more than 25% from the average concentration of the deep level dopant in the continuous section of the boule.
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