METHOD FOR FABRICATING AN N-TYPE SEMICONDUCTOR MATERIAL USING SILANE AS A PRECURSOR
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United States of America Patent
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Issued Date -
Dec 8, 2011
app pub date -
Oct 12, 2007
filing date -
Oct 12, 2007
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Abstract
A method for fabricating a group III-V n-type nitride structure comprises fabricating a growth Si substrate and then depositing a group III-V n-type layer above the Si substrate using silane gas (SiH.sub.4) as a precursor at a flow rate set to a first predetermined value (210). Subsequently, the SiH.sub.4 flow rate is reduced to a second predetermined value during the fabrication of the n-type layer (220). The method also comprises forming a multi-quantum-well active region above the n-type layer. In addition, the flow rate is reduced over a predetermined period of time, and the second predetermined value is reached at a predetermined, sufficiently small distance from the interface between the n-type layer and the active region (230).
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