METHOD FOR MANUFACTURING METAL LAMINATED SUBSTRATE FOR SEMICONDUCTOR ELEMENT FORMATION AND METAL LAMINATED SUBSTRATE FOR SEMICONDUCTOR ELEMENT FORMATION
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United States of America Patent
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Issued Date -
Dec 1, 2011
app pub date -
Oct 20, 2009
filing date -
Nov 12, 2008
priority date (Note) -
Abandoned
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Abstract
made of Cu or a Cu alloy which is cold-rolled at a rolling reduction of 90% or more; laminating the metal plate and the metal foil such that an activated surface of the metal plate and an activated surface of the metal foil face each other in an opposed manner and applying cold rolling to the metal plate and the metal foil which are laminated to each other at a rolling reduction of 10% or less, for example; and biaxially orienting crystals of the metal foil by heat treatment at a temperature of not lower than 150° C. and not higher than 1000° C.
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