REFERENCE CURRENT GENERATOR USED FOR PROGRAMMING AND ERASING OF NON-VOLATILE MEMORY
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United States of America Patent
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Issued Date -
Nov 24, 2011
app pub date -
May 21, 2010
filing date -
May 21, 2010
priority date (Note) -
Abandoned
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Abstract
A reference current generator used for programming and erasing of the non-volatile memory. Wherein, a self-biasing reference generator is used to generate a first reference voltage of a negative temperature coefficient and a second reference voltage of a positive temperature coefficient. A voltage converter receives said first reference voltage and generate a third reference voltage having its temperature coefficient less than that of said first reference voltage, and said second reference voltage and said third reference voltage are input to a reference current source, such that said reference current source generates a reference current of low temperature sensitivity. Through said reference current source, said second reference voltage and said third reference voltage are used to compensate said negative temperature coefficient of a threshold voltage of a transistor, thus reducing difference of times required for programming and erasure under various operation temperatures.
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